US Patent Issued to International Business Machines on March 3 for "Vertical field effect transistor with self-aligned backside trench epitaxy" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,645, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical field effect transistor with self-aligned backside trench epitaxy" was invented by Ruilong Xie (Niskayuna, N.Y.), Brent A. Anderson (Jericho, Vt.), Shogo Mochizuki (Mechanicville, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Albert M. Chu (Nashua, N.H.) and Nicholas Anthony Lanzillo (Wynantskill, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure with self-aligned backside trench epitaxy includes a channel fin extending vertically from a bottom source/drain region of a field effect transistor. The bottom source...