US Patent Issued to International Business Machines on March 3 for "Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET" (New York, California Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,683, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET" was invented by Julien Frougier (Albany, N.Y.), Andrew M. Greene (Slingerlands, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Heng Wu (Santa Clara, Calif.), Min Gyu Sung (Latham, N.Y.), Liqiao Qin (Albany, N.Y.) and Gen Tsutsui (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a single stack dual channel gate-all-around nanosheet with st...