US Patent Issued to International Business Machines on March 3 for "Multifilament resistive memory with insulation layers" (New York Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,776, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Multifilament resistive memory with insulation layers" was invented by Paul Michael Solomon (Westchester, N.Y.), Takashi Ando (Eastchester, N.Y.), Eduard Albert Cartier (New York) and John Rozen (Hastings on Hudson, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A grain-boundary self-aligned resistive memory structure is provided enabling the closely-packed formation of multiple, oxide-based, ReRAM elements in parallel, each with its own compliance resistor. The structure is capable of forming multiple filaments, one per element, with the aim of reduc...