US Patent Issued to International Business Machines on March 3 for "Forming gate all around device with silicon-germanium channel" (New York Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,652, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Forming gate all around device with silicon-germanium channel" was invented by Shogo Mochizuki (Mechanicville, N.Y.), Andrew M. Greene (Slingerlands, N.Y.) and Gen Tsutsui (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein include semiconductor structures that may include a semiconductor structure for improving the switching speed of a first transistor. The first transistor may include a first source/drain (S/D), a metal gate, a spacer between the first S/D and the metal gate, and a first nanosheet channel. The first nanoshee...