US Patent Issued to International Business Machines on March 24 for "Tight pitch directional selective via growth" (New York Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,487, issued on March 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Tight pitch directional selective via growth" was invented by Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Koichi Motoyama (Clifton Park, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor interconnect structure and formation thereof. The semiconductor interconnect structure includes a subtractively formed via located on top of a lower level metal line. The subtractively formed via has a bottom portion and a top portion. The semiconductor interconnect structure further includes a selectively grown regi...