ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,484, issued on March 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Backside diffusion break" was invented by Ruilong Xie (Niskayuna, N.Y.), Jianwei Peng (Clifton Park, N.Y.), Shay Reboh (Guilderland, N.Y.), Brent A. Anderson (Jericho, Vt.) and Nicholas Alexander Polomoff (Hopewell Junction, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor component includes a backside contact. The semiconductor component further includes two inactive transistor gates each associated with a region of source/drain material of a respective transistor. The region of source/drain material of at least one of the transistors...