US Patent Issued to International Business Machines on March 17 for "Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors" (New York Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,719, issued on March 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors" was invented by ChoongHyun Lee (Rensselaer, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.) and Shogo Mochizuki (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes forming a plurality of fins on a substrate, wherein each fin of the plurality of fins includes silicon germanium. A layer of silicon germanium oxide is deposited on the plurality of fins, and a...