ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,849, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Backside contacts for stacked transistor structures with shifted channels" was invented by Ruilong Xie (Niskayuna, N.Y.), Shay Reboh (Guilderland, N.Y.), Tenko Yamashita (Schenectady, N.Y.) and Kisik Choi (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first transistor including a first set of one or more channels, a second transistor vertically stacked over the first transistor, the second transistor including a second set of one or more channels, the second set of channels of the second transistor being...