US Patent Issued to International Business Machines on June 30 for "Enlarged shallow trench isolation for backside power" (New York, Utah Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,535, issued on June 30, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Enlarged shallow trench isolation for backside power" was invented by Shravana Kumar Katakam (Lehi, Utah), Tao Li (Slingerlands, N.Y.), Kisik Choi (Watervliet, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same include a first semiconductor device in a first device region and a second semiconductor device in a second device region. A dielectric structure between the first device region and the second device region laterally extends part way underneath the first semicon...