US Patent Issued to International Business Machines on June 23 for "Stacked transistor backside contact formation" (New York Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,678, issued on June 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked transistor backside contact formation" was invented by Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Christopher J. Penny (Saratoga Springs, N.Y.), Hosadurga Shobha (Niskayuna, N.Y.), Koichi Motoyama (Clifton Park, N.Y.) and John Christopher Arnold (North Chatham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor IC structure includes a dielectric contact liner between an upper S/D region backside contact and a lower S/D region. As a result of the dielectric contact liner, the overlap between the upper transistor a...