US Patent Issued to International Business Machines on June 16 for "Reducing channel structure tip damage during spacer deposition" (New York Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,260, issued on June 16, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Reducing channel structure tip damage during spacer deposition" was invented by Ruilong Xie (Niskayuna, N.Y.), Hemanth Jagannathan (Niskayuna, N.Y.), Oleg Gluschenkov (Tannersville, N.Y.) and Julien Frougier (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor channel structure that has a body and a tip and a dielectric spacer adjacent to the tip. The tip is no less than 70% the thickness of the body."

The patent was filed on Feb. 16, 2022, under Application No. 17/673,775.

*For further informati...