US Patent Issued to International Business Machines on July 7 for "VTFET with buried power rails" (California, New York, Vermont Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,438, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"VTFET with buried power rails" was invented by Chen Zhang (Santa Clara, Calif.), Ruilong Xie (Niskayuna, N.Y.), Heng Wu (Santa Clara, Calif.), Junli Wang (Slingerlands, N.Y.) and Brent A. Anderson (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a buried power rail, a buried oxide (BOX) layer formed on the buried power rail, a plurality of channel fins formed on the BOX layer, a bottom epitaxial layer formed on the BOX layer and between the channel fins such that the BOX layer ...