US Patent Issued to International Business Machines on July 7 for "Self-aligned substrate isolation (SASI) of gate-all-around nanosheet field effect transistors" (New York, Pennsylvania Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,443, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned substrate isolation (SASI) of gate-all-around nanosheet field effect transistors" was invented by Julien Frougier (Albany, N.Y.), Nicolas Jean Loubet (Guilderland, N.Y.), Andrew M. Greene (Slingerlands, N.Y.), Andrew Gaul (Halfmoon, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.), Curtis S. Durfee (Schenectady, N.Y.), Eric Miller (Albany, N.Y.), Ronald Newhart (Lebanon, Pa.), Choudhury Mahboob Ellahi (Halfmoon, N.Y.), Anthony I. Chou (Guilderland, N.Y.) and Susan Ng Emans (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trad...