US Patent Issued to INTERNATIONAL BUSINESS MACHINES on July 7 for "Co-integrated resonant tunneling diode and high-electron mobility transistor" (Swiss Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,435, issued on July 7, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Co-integrated resonant tunneling diode and high-electron mobility transistor" was invented by Eunjung Cha (Zurich), Bogdan Cezar Zota (Rueschlikon, Switzerland), Kirsten Emilie Moselund (Ruschlikon, Switzerland) and Katarzyna Hnida-Gut (Rueschlikon, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more devices and/or methods provided herein relate to a method for fabricating a semiconductor device having a co-integrated RTD and HEMT. A semiconductor device can comprise an RTD and an HEMT that are co-integrated along a substrate. A fabricatio...