US Patent Issued to International Business Machines on July 7 for "Bottom dielectric isolation for vertically stacked devices" (California, New York Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,451, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Bottom dielectric isolation for vertically stacked devices" was invented by Sanjay C. Mehta (San Jose, Calif.), Shogo Mochizuki (Mechanicville, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first and a second nanosheet stack, a shallow trench isolation region vertically aligned between them, a continuous dielectric layer below the first and second nanosheet stack and above the shallow trench isolation region. The shallow trench isolation region is vertically aligned with a source drain between the first and the secon...