ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,246, issued on July 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor contact area matching" was invented by Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Jingyun Zhang (Albany, N.Y.) and Kisik Choi (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure with matched frontside and backside source/drain contact areas is provided. The semiconductor structure includes a backside contact region, a first source/drain region disposed on the backside contact region, wherein a shared surface between the backside contact region and a backside of the first source/drain region...