US Patent Issued to International Business Machines on July 14 for "Spacer cut for asymmetric source/drain epitaxial structure in stacked FET" (New York Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,817, issued on July 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Spacer cut for asymmetric source/drain epitaxial structure in stacked FET" was invented by Su Chen Fan (Cohoes, N.Y.), Albert M. Young (Fishkill, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Prabudhya Roy Chowdhury (Albany, N.Y.) and Jay William Strane (Warwick, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a stacked device having a first epitaxial region and a second epitaxial region vertically displaced from the first epitaxial region. The first epitaxial region comprising an asymmetric profile with a horizontal protru...