ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,816, issued on July 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Reduced gate top CD with wrap-around gate contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Su Chen Fan (Cohoes, N.Y.), Ravikumar Ramachandran (Pleasantville, N.Y.) and Julien Frougier (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is presented including a plurality of field effect transistor (FET) devices, each FET device having a different gate threshold voltage, first spacers disposed on sidewalls of each FET device, second spacers disposed over and in direct contact with the first spacers, the second spacer...