US Patent Issued to International Business Machines on July 14 for "Frontside to backside connection within double diffusion break" (Utah, New York Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,128, issued on July 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Frontside to backside connection within double diffusion break" was invented by Shravana Kumar Katakam (Lehi, Utah), Sagarika Mukesh (Albany, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Nicholas Anthony Lanzillo (Wynantskill, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor IC device includes a conductive through device connection. The connection may be located within a double diffusion break (DDB) region that separates active regions. The connection may include a faux S/D region between a frontside contact and ...