US Patent Issued to International Business Machines on Jan. 27 for "Backside contact for semiconductor device" (New York Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,786, issued on Jan. 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Backside contact for semiconductor device" was invented by Ruilong Xie (Niskayuna, N.Y.), Tsung-Sheng Kang (Ballston Lake, N.Y.), Daniel Schmidt (Niskayuna, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Backside contacts wrapping around source/drain regions provide increased contact areas for electrical connections between field-effect transistors and metallization layers. Cavities formed within a device layer expose sidewalls of selected source/drain regions. The backside contacts extend within such cavities and a...