US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Feb. 17 for "Stacked FET with bottom epi size control and wraparound backside contact" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,627, issued on Feb. 17, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Stacked FET with bottom epi size control and wraparound backside contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Jay William Strane (Wappingers Falls, N.Y.), Shay Reboh (Guilderland, N.Y.), Brent A. Anderson (Jericho, Vt.), Junli Wang (Slingerlands, N.Y.) and Albert M. Chu (Nashua, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stacked transistor structure having field effect transistors on two levels. The two levels include a top side and a bottom side. Active regions are disposed on the bottom side including...