US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Feb. 17 for "Stacked-FET SRAM cell with bottom pFET" (New York Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,260, issued on Feb. 17, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Stacked-FET SRAM cell with bottom pFET" was invented by Gen Tsutsui (Glenmont, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is presented including a bottom field effect transistor (FET) including a plurality of bottom source/drain (S/D) epi regions, a top FET including a plurality of top S/D epi regions, a bonding dielectric layer disposed directly between the bottom FET and the top FET, and a node contact advantageously extending from a bottom S/D epi...