US Patent Issued to International Business Machines on Feb. 17 for "Semiconductor structure having a backside contact with backside sidewall spacers" (New York Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,338, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor structure having a backside contact with backside sidewall spacers" was invented by Tao Li (Slingerlands, N.Y.), Julien Frougier (Albany, N.Y.), Min Gyu Sung (Latham, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a source/drain region having a backside surface disposed in a backside interlayer dielectric layer, a backside contact disposed in the backside interlayer dielectric layer, wherein the backside contact is disposed on the backside surface of the source/drain re...