US Patent Issued to International Business Machines on Feb. 17 for "Self-aligned backside contact with protruding source/drain" (New York Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,359, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned backside contact with protruding source/drain" was invented by Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Chanro Park (Clifton Park, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.) and Tenko Yamashita (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present invention provide a semiconductor structure. The semiconductor structure may include a PFET source/drain (S/D). The PFET S/D may include a silicon germanium (SiGe)-based epi protruding through a BILD plane between a backside interlayer dielect...