US Patent Issued to International Business Machines on Feb. 17 for "Self-aligned backside contact with deep trench last flow" (New York, Vermont Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,626, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned backside contact with deep trench last flow" was invented by Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.) and Brent A. Anderson (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first source/drain (S/D) epitaxy and a second S/D epitaxy and a gate contact. The device also includes a back end of the line (BEOL) layer electrically connected to the first S/D epitaxy and the gate contact on a top side of the device and a wafer that carries the BEOL layer and is ...