US Patent Issued to International Business Machines on Feb. 17 for "Negative capacitance gate-all-around transistor with tunable capacitance ratio" (New York Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,341, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Negative capacitance gate-all-around transistor with tunable capacitance ratio" was invented by Reinaldo Vega (Mahopac, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Jingyun Zhang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided that includes a tunable and shared non-conductive layer as part of a gate stack of at least a pair of nanosheet GAA transistors with a shared metal gate electrode. The semiconductor structure has a tunable non-conductive material/gate dielectric area ratio...