ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,555, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Magnetic tunnel junction with an etched bottom electrode having non-planar sidewalls" was invented by Koichi Motoyama (Clifton Park, N.Y.), Oscar van der Straten (Guilderland Center, N.Y.), Joseph F. Maniscalco (Greenville, S.C.) and Chih-Chao Yang (Glenmont, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention are directed to a structure comprising a magnetic tunnel junction (MTJ) element and an etched bottom electrode (BE) communicatively coupled to the MTJ element. The etched BE includes a substantially non-planar BE sidewall...