ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,297, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Leveling dielectric surfaces for contact formation with embedded memory arrays" was invented by Michael Rizzolo (Delmar, N.Y.), Devika Sarkar Grant (Rensselaer, N.Y.) and Son Nguyen (Schenectady, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An approach providing a semiconductor structure that provides a self-leveling, flowable, dielectric material for a gap fill material between vertical structures in many emerging non-volatile memory devices that are being formed with vertical structures for increasing memory device density. The semiconductor struc...