US Patent Issued to International Business Machines on Feb. 17 for "Hybrid power rail formation in dielectric isolation for semiconductor device" (New York, Minnesota Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,635, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Hybrid power rail formation in dielectric isolation for semiconductor device" was invented by Nikhil Jain (Apple Valley, Minn.), Prabudhya Roy Chowdhury (Albany, N.Y.), Kisik Choi (Watervliet, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a channel having layers of silicon separated from each other; a metal gate in contact with the layers of silicon; source/drain regions adjacent to the metal gate; a frontside power rail extending through the layers of silicon; a dielectric separating...