ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,376, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Work function metal patterning and middle-of-line self-aligned contacts for nanosheet technology" was invented by Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Min Gyu Sung (Latham, N.Y.) and Chanro Park (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device fabrication method is provided and includes forming first and second stacks each including a dual layer top dielectric cap (TDC), sequentially surrounding each layer and a portion of the dual layer TDC of the first stack with...