ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,621, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Top contact structure for embedded MRAM" was invented by Ailian Zhao (Slingerlands, N.Y.), Wu-Chang Tsai (Albany, N.Y.), Ashim Dutta (Clifton Park, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming at least one magnetic tunnel junction (MTJ) stack on top of a supporting structure; forming a conformal liner surrounding a sidewall of the MTJ stack; forming a first dielectric layer surrounding the conformal liner; se...