US Patent Issued to International Business Machines on Feb. 10 for "Separate gate complementary field-effect transistor" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,371, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Separate gate complementary field-effect transistor" was invented by Huimei Zhou (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Miaomiao Wang (Albany, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises a first nanosheet device having at least one first channel layer and a first gate, a second nanosheet device disposed above the first nanosheet device and having at least one second channel layer and a second gate, and an isolation layer disposed between the first nanosheet device and t...