ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,714, issued on Feb. 10, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Late middle-of-line gate cut with power bar formation" was invented by Shravana Kumar Katakam (Lehi, Utah), Tao Li (Slingerlands, N.Y.), Indira Seshadri (Niskayuna, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. The first nanodevice includes a first source/drain contact. The second nanodevice includ...