US Patent Issued to International Business Machines on Dec. 2 for "Vertically stacked cascode bipolar junction transistor (BJT) pair sensor" (New York Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,501, issued on Dec. 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertically stacked cascode bipolar junction transistor (BJT) pair sensor" was invented by Alexander Reznicek (Troy, N.Y.) and Bahman Hekmatshoartabari (White Plains, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sensor device includes a vertically stacked cascode bipolar junction transistor pair, and a first trench having a first sidewall, wherein a portion of the first sidewall is provided by the first sensing surface, wherein a bipolar junction transistor and a dual-base bipolar junction transistor of the cascode bipolar junction transistor pair ar...