ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,480, issued on Dec. 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Stacked FETS with contact placeholder structures" was invented by Sagarika Mukesh (Albany, N.Y.), Tao Li (Slingerlands, N.Y.), Prabudhya Roy Chowdhury (Albany, N.Y.), Liqiao Qin (Albany, N.Y.), Nikhil Jain (Apple Valley, Minn.) and Ruilong Xie (Niskayuna, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided that includes a first FET device region including a plurality of first FETs, each first FET of the plurality of first FETs includes a first source/drain region located on each side of a functional gate structure. A sec...