US Patent Issued to International Business Machines on Dec. 2 for "Stacked complementary field effect transistors" (New York Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,511, issued on Dec. 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked complementary field effect transistors" was invented by Huimei Zhou (Albany, N.Y.), Alexander Reznicek (Troy, N.Y.), Miaomiao Wang (Albany, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CFET (complementary field effect transistor) structure including a first transistor disposed above a second transistor, a first source/drain region of the first transistor disposed above a second source/drain region of the second transistor, a first source/drain contact for the first source/drain region, and a second source dr...