ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,745, issued on Aug. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Multi-gate transistor with concave and convex edges" was invented by Reinaldo Vega (Mahopac, N.Y.), Takashi Ando (Eastchester, N.Y.), James P. Mazza (Saratoga Springs, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.) and David Wolpert (Poughkeepsie, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate and a transistor positioned on the substrate. The transistor includes transistor includes a channel region, a shared gate region, and a source and drain region. The source and drain region includes a concave outer ...