US Patent Issued to International Business Machines on Aug. 4 for "Memory structure with non-ion beam etched MTJ and top electrode" (New York, California Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,924, issued on Aug. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Memory structure with non-ion beam etched MTJ and top electrode" was invented by Chanro Park (Clifton Park, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Hsueh-Chung Chen (Cohoes, N.Y.), Yann Mignot (Slingerlands, N.Y.) and Daniel Worledge (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure including a magnetic tunnel junction (MTJ) structure and a top electrode that are both formed without utilizing ion beam etching is provided. The MTJ structure, which includes a lower magnetic stack, a tunnel barrier layer and an upper magne...