US Patent Issued to International Business Machines on Aug. 26 for "Unipolar-FET implementation in stacked-FET CMOS" (New York Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,352, issued on Aug. 26, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Unipolar-FET implementation in stacked-FET CMOS" was invented by Gen Tsutsui (Albany County, N.Y.) and Shogo Mochizuki (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments are disclosed for a system. The system includes a semiconductor structure. The semiconductor structure includes a stacked field effect transistor (stacked-FET). The stacked-FET includes a top FET having multiple top channels having multiple nano-sheets in contact with corresponding nano-sheets in a corresponding top channels for an active gate. The stacked-FET ...