US Patent Issued to International Business Machines on Aug. 25 for "Single process double gate and variable threshold voltage MOSFET" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,793, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Single process double gate and variable threshold voltage MOSFET" was invented by Sung Dae Suk (Watervliet, N.Y.), Devendra K. Sadana (Pleasantville, N.Y.) and Tze-Chiang Chen (Yorktown Heights, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Double gate/gate-all-around and variable threshold voltage MOSFET devices and techniques for fabrication thereof in a single backside process are provided. In one aspect, a MOSFET device includes: a channel in between source/drain regions; at least one first gate disposed on a first side of the channel at a fronts...