US Patent Issued to International Business Machines on Aug. 25 for "Forming NS gates with improved mechanical stability" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,836, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Forming NS gates with improved mechanical stability" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Nicolas Loubet (Guilderland, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.) and Prasad Bhosale (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first gate stack disposed over an active region and a second gate stack disposed over a shallow trench isolation (STI) region such that the first gate stack is taller than the second gate stack. The second gate stack includes a plura...