US Patent Issued to International Business Machines on Aug. 25 for "Direct backside contact with replacement backside dielectric" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,147, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Direct backside contact with replacement backside dielectric" was invented by Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Son Nguyen (Schenectady, N.Y.) and Nicholas Alexander Polomoff (Hopewell Junction, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a frontside including first metal structures, transistors disposed between the frontside and a backside opposite the frontside, each transistor including a source/drain positioned within a stack of nanolayers, the stack of nanolayers forming a gate struct...