ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,613, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Nanosheet device with vertical blocker fin" was invented by Ruilong Xie (Niskayuna, N.Y.), Chen Zhang (Guilderland, N.Y.), Heng Wu (Guilderland, N.Y.), Julien Frougier (Albany, N.Y.) and Alexander Reznicek (Troy, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A FET channel includes a stack of silicon nanosheets. The silicon nanosheets are oriented parallel to a planar portion of the FET in which the FET channel is formed. The FET channel also includes a vertical blocker fin. The vertical blocker fin is attached to at least one nanosheet in the stack...