US Patent Issued to International Business Machines on April 14 for "Spin-orbit torque memory devices" (New York, Connecticut Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,669, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Spin-orbit torque memory devices" was invented by Ching-Tzu Chen (Ossining, N.Y.) and Henry K. Utomo (Ridgefield, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Spin-orbit torque magnetoresistive random access memory (SOT MRAM) devices are provided. Each of the SOT MRAM devices integrates a SOT layer and an interconnect layer at a same metal level using a topological conductor (i.e., a topological metal or a topological semimetal) as both the interconnect layer and the SOT layer. The SOT MRAM devices further include a magnetic tunnel junction (MTJ)...