US Patent Issued to International Business Machines on April 14 for "Magnetic tunnel junction structure for MRAM" (New York, South Carolina Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,671, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magnetic tunnel junction structure for MRAM" was invented by Oscar Van Der Straten (Guilderland Center, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Joseph F. Maniscalco (Greenville, S.C.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Method and a magnetoresistive random access memory (MRAM) structure is provided. The structure includes an interconnect and a multilayered magnetic tunnel junction (MTJ) pillar located on the interconnect and having an outermost sidewall. The MTJ pillar includes an electrode layer electri...