US Patent Issued to International Business Machines on April 14 for "Back side phase change memory (PCM) with PCM back side source/drain contact structure" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,674, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Back side phase change memory (PCM) with PCM back side source/drain contact structure" was invented by Carl Radens (LaGrangeville, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Julien Frougier (Albany, N.Y.) and Juntao Li (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided in which a phase change memory (PCM) device region including a PCM is located in a back side of a wafer. A PCM device back side source/drain contact structure connects the PCM to a first source/drain structure of...