US Patent Issued to International Business Machines, SAMSUNG ELECTRONICS on March 17 for "Half metallic Heusler multilayers with perpendicular magnetic anisotropy" (California Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,868, issued on March 17, was assigned to International Business Machines Corp. (Armonk, N.Y.) and SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Half metallic Heusler multilayers with perpendicular magnetic anisotropy" was invented by Mahesh Samant (San Jose, Calif.), Sergey Faleev (Santa Clara, Calif.), Panagiotis Charilaos Filippou (Fremont, Calif.), Chirag Garg (San Jose, Calif.) and Jaewoo Jeong (Los Altos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler mu...