US Patent Issued to Intel on Sept. 8 for "Enhanced subtractive etch anisotropy using etch rate gradient" (Arizona Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,107, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.).

"Enhanced subtractive etch anisotropy using etch rate gradient" was invented by Jeremy Ecton (Gilbert, Ariz.), Robert Alan May (Chandler, Ariz.), Suddhasattwa Nad (Chandler, Ariz.), Srinivas V. Pietambaram (Chandler, Ariz.) and Brandon C. Marin (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provides for a package substrate, including: a core comprising insulative material; first conductive traces in contact with a surface of the core; and buildup layers in contact with the first conductive traces and the surface of the core, the buildup layers comp...