US Patent Issued to Intel on Oct. 27 for "Scaled gain cell enhanced at low temperatures" (Oregon Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,629, issued on Oct. 27, was assigned to Intel Corp. (Santa Clara, Calif.).

"Scaled gain cell enhanced at low temperatures" was invented by Abhishek Anil Sharma (Portland, Ore.), Sagar Suthram (Portland, Ore.), Wilfred Gomes (Portland, Ore.), Anand Murthy (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Bits are stored in cells having two transistors between two parallel bitlines. In a memory array, first and second transistor channels in a bit cell are parallel and offset and coupled to first and second bitlines, respectively, which are also parallel and offset. Adjacent bit cells share corresponding tr...