ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,445,092, issued on Oct. 14, was assigned to Intel Corp. (Santa Clara, Calif.).
"Piezo-resistive resonator device having drive and sense transistors with wells of opposite doping" was invented by Gary A. Allen (Portland, Ore.), Tanay A. Gosavi (Portland, Ore.), Raseong Kim (Portland, Ore.), Dmitri Evgenievich Nikonov (Beaverton, Ore.) and Ian Alexander Young (Olympia, Wash.).
According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a piezo-resistive resonator device includes one or more drive transistors with source and drain regions in a first well and a sense transistor with source and drain regions in a second well of opposite polarity than the...